rta 3008 peugeot brochure
2019
JAC PA8200 - Diesel 1.8 HDi 110 ch (2019)
See also
List of Peugeot engines
References
External links
The Best (2006)
Best of the Best (2004)
Peugeot 3008 Official Site
Category:Peugeot engines
Category:Inline-four engines
Category:Gasoline engines by model1. Field of the Invention
The present invention relates to a structure of a suspended-gate type semiconductor device and a method of fabricating the same.
2. Description of the Background Art
Recently, a device has been developed, called a suspended-gate type semiconductor device, in which a silicon gate electrode is suspended above a channel formed in a semiconductor substrate. In such a suspended-gate type semiconductor device, in order to reduce a short-channel effect, a high concentration of impurities is required for the source and drain regions to be formed on both sides of the silicon gate electrode. Further, in order to form a very fine gate electrode on the suspended-gate type semiconductor device, a technique of introducing impurities in a very thin amount must be developed.
A conventional example of the semiconductor device in which the high concentration of impurities is introduced in a very thin amount will be described with reference to FIG. 11.
Referring to FIG. 11, a field oxide film 102 is formed on a P-type silicon substrate 100 by a LOCOS process. A P-type impurity is introduced into the silicon substrate 100 at a predetermined concentration through the field oxide film 102 by a conventional ion implantation technique. As a result, a P-type impurity region 103 is formed in a surface region of the silicon substrate 100. A P-type impurity is further introduced into the surface region of the P-type impurity region 103 by a conventional ion implantation technique. Thus, a P-type impurity region 104 is formed which is higher in concentration than the P-type impurity region 103.
Then, a silicon oxide film 106 is formed on the surface of the silicon substrate 100 by the CVD technique. A silicon oxide film 106 is also formed by the CVD technique on the silicon substrate 100 by using a mixture gas of silane and ozone.
A silicon nitride film 107 is formed on the silicon oxide film 106 by the CVD technique. A silicon nitride 01e38acffe
As for some reason when I write the first time it doesn't work, in the second it works.
How can I do to have both?
Thank you
A:
If you do something like
String text = "50 km
";
String encoded = URLEncoder.encode(text,"UTF-8");
String decoded = URLDecoder.decode(encoded, "UTF-8");
this way you don't need to change the encoding in the server and that's why when you append the new string to a new line it isn't altered
you can check the documentation here
Q:
addToSet field mismatch with mongoose
I'm trying to do a request where i add a new field to an array.
The document is saved but when i try to retrieve it back, it brings all the items that don't have this field.
My schema :
var UserSchema = new Schema({
fb_id: { type: String, required: true, trim: true },
users: [{
fb_id: { type: String, required: true, trim: true },
facebook_id: { type: String, required: true, trim: true },
email: { type: String, required: true, trim: true },
facebook_email: { type: String, required: true, trim: true },
phone: { type: String, required: true, trim: true },
city: { type: String, required: true, trim: true },
desc: { type: String, required: true, trim: true },
url: { type: String, required: true, trim: true },
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